Yield breakthrough
Precision down to single digits (nm), yield improvement
Breakthrough in alignment bottleneck at the "last nanometer"
US$ billion (2030 Advanced Packaging Market Size)①
The compound annual growth rate of hybrid bonding equipment②
Important alignment accuracy target③
Resolution ≥ 100nm
Response time 1-10ms
Mechanical properties: suffer from friction and wear, leading to performance degradation
1nm resolution
Response time < 100 μs
Mechanical properties: frictionless, ultra-long lifetime
For hybrid bonding of 300mm wafers, 3-axis (XYθz) can only solve in-plane alignment and cannot cope with wafer warpage; 6-axis system (XYZθxθyθz) is the mainstream solution in the industry, which can simultaneously achieve nanometer-level planar alignment and global leveling, effectively reducing contact stress and ensuring bonding yield.
Used for precise alignment of patterns on upper and lower wafers, achieving <10 nm overlay accuracy
travel distance 100~200 μm
1nm resolution
Repeatability ±3nm
Adjusting the wafer's rotation angle to correct edge alignment deviations.
Stroke: 200~500 μrad
Resolution: 0.1 μrad
Controlling the vertical distance during the bonding process ("the last nanometer") enables a soft landing.
Stroke: 100~500 μm
High stiffness (on the order of kN/mm)
Load Capacity: 300 N
Bandwidth > 100 Hz
Actively compensates for the warpage of 300mm wafers, ensuring strict parallelism of the wafer surface and reducing the risk of bonding voids.
Stroke length 200~1000 μrad
Resolution 0.15 μrad
Leveling range covers common wafer warpage degrees
Precision down to single digits (nm), yield improvement
Microsecond-level response; shortened cycle
Maintenance-free, ultra-long cycle life
Enables customers to win orders for HPC and AI chips
Modular design to adapt to more demanding future process nodes.
Copyright © Shanghai YiNGUAN Semiconductor Technology Co., LTD. Powered by Bomin
