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Shear-Type Piezoelectric Ceramic Stack
Features

High service life

Sub-nanometer resolution

Drive voltage -250V to +250V

Ceramic packaging to ensure insulation performance

Suitable for high vacuum environments 10⁻⁷ Pa

High Curie temperature of 230℃

Applications
Scientific research
Industrial automation
Precision motion control
Precision optical adjustment equipment
Semiconductor equipment
Precision inspection equipment
Performance Chart
Technical Specifications
PAS-R001-Y-6Q Unit Tolerance
Active axes X/Y
Electrical properties
Operating voltage -250~250 V
Max. displacement (+250~-250) 13 μm ±15%
Resonant frequency of the longitudinal direction 190 kHz ±20%
Anti - resonant frequency of the longitudinal direction 235 kHz ±20%
Resonant frequency of the thickness direction 580 kHz ±20%
Anti - resonant frequency of the thickness direction 615 kHz ±20%
Electrical capacitance 23 nF ±15%
Operating temperature range -25~130 °C
End face electrode material Gold -
Cable length 75 mm ±5mm
Curie temperature 280 °C
Dimensions
L1 10 mm ±0.1mm
L2 7.8 mm ±0.1mm
L3 4.35 mm ±0.1mm
Model Interpretation
Customization Info

Drive Voltage: Different drive voltages can meet various displacement requirements. Common standard voltages available include 100V, 150V, and 250V.

Output Displacement: The output displacement is related to the stack height. Depending on different application scenarios, a maximum shear displacement of up to 20μm can be provided.

Operating Frequency: High - frequency driving may cause damage or heating of the shear stack device. A maximum drive frequency of up to 20kHz is provided.

Dimensions: In terms of length and width, options such as 4mm, 6mm, 8mm, and 10mm are available. In terms of height, the maximum selection is 15mm.

Wiring Harness: Under the condition of meeting the AWG usage standards, the wiring harness is optional. For convenient connection of the positive and negative electrode wires, the soldering point position can be selected within the allowable error range of performance variation.

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