Your Current Location: HOME > PRODUCTS > Piezoelectric Materials >
Piezoelectric Material

Piezoelectric materials can generate an electric field due to mechanical deformation, and they can also undergo mechanical deformation in response to an applied electric field. This inherent electromechanical coupling effect has led to widespread applications of piezoelectric materials in engineering. For instance, active vibration damping, noise control, non-destructive testing, and ultrasound imaging, among others.

Discover the precision engineering of YiNGUAN Company's piezoelectric devices, meticulously crafted with state-of-the-art lead zirconate titanate (PZT) material.

Experience unparalleled accuracy in driving mechanical components, designed to deliver exceptional

ultra-precision positioning for the most discerning international clients.

Elevate your projects with our cutting-edge technology.

Features

Suitable for precision motion.

Wide range of application fields.

Vacuum compatible, not affected by electromagnetic interference.

Possesses a certain level of mechanical strength and high compressive resistance.

Applications
Technical Specifications
Symbol YGP-51 YGP-51A YGP-51H YGP-51G YGP-P84 YGP-P81 Unit
Electrical property
Permittivity ε33T 1900 2600 4200 1800 1600 1400
Dielectric loss tgδ <2.5 <2.5 <2.5 1.50 0.50 0.30 %
Electromechanical property
Electro-mechanical coupling factor Kp 0.65 0.66 0.69 0.62 0.54 0.55 %
K31 0.37 0.39 0.42 0.35 0.41 0.35 %
K33 0.72 0.77 0.78 0.69 0.56 0.65 %
KT 0.50 0.48 0.50 0.49 0.41 0.46 %
Piezoelectric Constant d31 -320 -220 -300 -220 -230 -120 10-12 C/N
d33 440 560 750 400 450 270 10-12 C/N
g31 -11 -10 -9 -10.5 -10 -11.5 10-3 Vm/N
g33 17.8 22.3 16.8 24 17.2 26 10-3 Vm/N
Frequency constant Np 2010 1980 2000 2080 2040 2235 kHz·mm
Nt 1950 2040 2030 2010 2000 2050 kHz·mm
N31 1400 1400 / 1400 1300 1340 kHz·mm
N33 1500 1350 / 1450 1250 1200 kHz·mm
Physical property
Mechanical quality factor Qm 80 90 60 50 800 2200
Density ρ 7.74 7.85 7.75 7.78 7.79 7.8 103kg/m³
Elastic compliance sE11 17 16 17 17 16 12 10-12 m²/N
sE33 21 19 21 20 18 14.6 10-12 m²/N
Curie temperature Tc 320 300 190 360 320 310 °C
Process characteristic
Sintering temperature Ts 1260 1260 1260 1260 1260 1260 °C
Strain(@20kv/cm) 1.5‰ 1.5‰ 1.5‰ 1.5‰ 1.5‰ 1.5‰
Related suggestion
Related solutions

Copyright © Shanghai YiNGUAN Semiconductor Technology Co., LTD. Powered by Bomin